Appearance of narrow band with hole doping in high Tc superconducting oxides

Tomio Koyama, Masashi Tachiki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The effect of hole doping on the electronic states in high Tc superconducting oxides is examined. Assuming the periodic Anderson model for the CuO system composed of highly correlated copper d electrons and oxigen p electrons, we calculated the density of states in the low energy region in the case that the bare p band is situated inside the Hubbard gap. We found that a narrow band like a heavy fermion band appears near the Fermi level inside the charge transfer gap when the hole number is small. This result explaines a new optical absorption band observed in La2-xSrxCuO4.

Original languageEnglish
Pages (from-to)1509-1510
Number of pages2
JournalPhysica C: Superconductivity and its applications
Volume162-164
Issue numberPART 2
DOIs
Publication statusPublished - 1989 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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