Antisite defect-free Lu3(GaxAl1-x)5O 12: Pr scintillator

M. Nikl, Jan Pejchal, E. Mihokova, J. A. Mares, H. Ogino, A. Yoshikawa, T. Fukuda, A. Vedda, C. D'Ambrosio

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128 Citations (Scopus)

Abstract

Pr-doped Lu3 (Gax Al1-x) 5 O12: Pr, x=0-1, single crystals were grown by the micro-pulling-down method. We study luminescence and scintillation characteristics of the sample set focusing on their dependence on the gallium content. For x=0.4 we obtain the high figure-of-merit material with elevated density, high efficiency, and very fast scintillation response below 20 ns without any slower components. Improvement of scintillation performance is explained as due to the absence of the antisite LuAl defects that was for the first time realized in such bulk garnet single crystals grown from the high temperature melt.

Original languageEnglish
Article number141916
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
Publication statusPublished - 2006 Apr 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Nikl, M., Pejchal, J., Mihokova, E., Mares, J. A., Ogino, H., Yoshikawa, A., Fukuda, T., Vedda, A., & D'Ambrosio, C. (2006). Antisite defect-free Lu3(GaxAl1-x)5O 12: Pr scintillator. Applied Physics Letters, 88(14), [141916]. https://doi.org/10.1063/1.2191741