Antisite defect-free Lu3(GaxAl1-x)5O 12: Pr scintillator

M. Nikl, J. Pejchal, E. Mihokova, J. A. Mares, H. Ogino, A. Yoshikawa, T. Fukuda, A. Vedda, C. D'Ambrosio

Research output: Contribution to journalArticlepeer-review

149 Citations (Scopus)


Pr-doped Lu3 (Gax Al1-x) 5 O12: Pr, x=0-1, single crystals were grown by the micro-pulling-down method. We study luminescence and scintillation characteristics of the sample set focusing on their dependence on the gallium content. For x=0.4 we obtain the high figure-of-merit material with elevated density, high efficiency, and very fast scintillation response below 20 ns without any slower components. Improvement of scintillation performance is explained as due to the absence of the antisite LuAl defects that was for the first time realized in such bulk garnet single crystals grown from the high temperature melt.

Original languageEnglish
Article number141916
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2006 Apr 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Antisite defect-free Lu3(GaxAl1-x)5O 12: Pr scintillator'. Together they form a unique fingerprint.

Cite this