TY - JOUR
T1 - Antiferromagnetic transition in Ru2CrSi in magnetic fields
AU - Hiroi, Masahiko
AU - Uchida, Kaori
AU - Shigeta, Iduru
AU - Ito, Masakazu
AU - Koyama, Keiichi
AU - Kimura, Shojiro
AU - Watanabe, Kazuo
N1 - Funding Information:
We thank Prof. S. Fujii for valuable discussions. This work is carried out in the Laboratory for Low Temperature and Materials Science, Faculty of Science, Kagoshima University. Electrical resistivity measurements using a superconducting magnet and a 3He cryostat were performed in the High Field Laboratory for Superconducting Materials, Institute for Materials Research, Tohoku University. Part of this work was performed using the MPMS of the Materials Design and Characterization Laboratory, Institute for Solid State Physics (ISSP), the University of Tokyo and we are grateful to T. Yamauchi at ISSP for advice and help. This work was supported by Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research 22360285.
PY - 2013/7
Y1 - 2013/7
N2 - In the Heusler compound Ru2CrSi, an antiferromagnetic transition at T N =14 K was revealed by specific heat and magnetization measurements. In this study the electrical resistivity is measured in magnetic fields up to 14.5 T, and the antiferromagnetic transition in magnetic fields is investigated. In the temperature dependence of the resistivity at zero field, a clear dip at ∼15 K and a hump with a maximum at ∼ 9 K are observed. This dip is considered to be due to the antiferromagnetic transition. With increasing magnetic field, the magnitude of the resistivity slightly increases around T N; i.e., a positive magnetoresistance is observed. The temperature dependence of the resistivity is hardly affected by increasing the magnetic field. The transition temperature decreases only by ∼ 0.3 K even with applying 14.5 T. These results demonstrate that the antiferromagnetic state in Ru2CrSi is unusually unaffected by a strong magnetic field.
AB - In the Heusler compound Ru2CrSi, an antiferromagnetic transition at T N =14 K was revealed by specific heat and magnetization measurements. In this study the electrical resistivity is measured in magnetic fields up to 14.5 T, and the antiferromagnetic transition in magnetic fields is investigated. In the temperature dependence of the resistivity at zero field, a clear dip at ∼15 K and a hump with a maximum at ∼ 9 K are observed. This dip is considered to be due to the antiferromagnetic transition. With increasing magnetic field, the magnitude of the resistivity slightly increases around T N; i.e., a positive magnetoresistance is observed. The temperature dependence of the resistivity is hardly affected by increasing the magnetic field. The transition temperature decreases only by ∼ 0.3 K even with applying 14.5 T. These results demonstrate that the antiferromagnetic state in Ru2CrSi is unusually unaffected by a strong magnetic field.
KW - RuCrSi
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U2 - 10.3938/jkps.62.2068
DO - 10.3938/jkps.62.2068
M3 - Article
AN - SCOPUS:84880008615
VL - 62
SP - 2068
EP - 2072
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 12
ER -