Antiferromagnetic resonance and magnetic structure of GdAs

Keiichi Koyama; Makoto Yoshida; Hiroyuki Nojiri; Takuo Sakon; Dexin Li; Takashi Suzuki; Mituhiro Motokawa

doi:10.1143/JPSJ.69.1521

Antiferromagnetic resonance and magnetic structure of GdAs

Keiichi Koyama, Makoto Yoshida, Hiroyuki Nojiri, Takuo Sakon, Dexin Li, Takashi Suzuki, Mituhiro Motokawa

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Electron spin resonance measurements on single-crystal and powder of GdAs have been performed in the temperature range from 4.2 to 40 K and in the frequency range from 55 to 585 GHz to obtain microscopic information about the magnetic structure. The results obtained indicate that GdAs is an "easy-plane" antiferromagnet with the magnetic moment lying in the (111) plane below Néel temperature (∼20K). According to an analysis of mean field approximation, the exchange field and the out-of-plane anisotropy field have been estimated to be μ₀H_E = 8.1T and μ₀H_A = 1.4T, respectively. The transition field (H_c = 2H_E + H_A) from the antiferromagnetic to the forced ferromagnetic state is 17.6 T.

Original language	English
Pages (from-to)	1521-1525
Number of pages	5
Journal	journal of the physical society of japan
Volume	69
Issue number	5
DOIs	https://doi.org/10.1143/JPSJ.69.1521
Publication status	Published - 2000 May

Keywords

Antiferromagnetic resonance
Electron spin resonance
GdAs
Low carrier system
Spin structure

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1143/JPSJ.69.1521

Cite this

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title = "Antiferromagnetic resonance and magnetic structure of GdAs",

abstract = "Electron spin resonance measurements on single-crystal and powder of GdAs have been performed in the temperature range from 4.2 to 40 K and in the frequency range from 55 to 585 GHz to obtain microscopic information about the magnetic structure. The results obtained indicate that GdAs is an {"}easy-plane{"} antiferromagnet with the magnetic moment lying in the (111) plane below N{\'e}el temperature (∼20K). According to an analysis of mean field approximation, the exchange field and the out-of-plane anisotropy field have been estimated to be μ0HE = 8.1T and μ0HA = 1.4T, respectively. The transition field (Hc = 2HE + HA) from the antiferromagnetic to the forced ferromagnetic state is 17.6 T.",

keywords = "Antiferromagnetic resonance, Electron spin resonance, GdAs, Low carrier system, Spin structure",

author = "Keiichi Koyama and Makoto Yoshida and Hiroyuki Nojiri and Takuo Sakon and Dexin Li and Takashi Suzuki and Mituhiro Motokawa",

year = "2000",

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TY - JOUR

T1 - Antiferromagnetic resonance and magnetic structure of GdAs

AU - Koyama, Keiichi

AU - Yoshida, Makoto

AU - Nojiri, Hiroyuki

AU - Sakon, Takuo

AU - Li, Dexin

AU - Suzuki, Takashi

AU - Motokawa, Mituhiro

PY - 2000/5

Y1 - 2000/5

N2 - Electron spin resonance measurements on single-crystal and powder of GdAs have been performed in the temperature range from 4.2 to 40 K and in the frequency range from 55 to 585 GHz to obtain microscopic information about the magnetic structure. The results obtained indicate that GdAs is an "easy-plane" antiferromagnet with the magnetic moment lying in the (111) plane below Néel temperature (∼20K). According to an analysis of mean field approximation, the exchange field and the out-of-plane anisotropy field have been estimated to be μ0HE = 8.1T and μ0HA = 1.4T, respectively. The transition field (Hc = 2HE + HA) from the antiferromagnetic to the forced ferromagnetic state is 17.6 T.

AB - Electron spin resonance measurements on single-crystal and powder of GdAs have been performed in the temperature range from 4.2 to 40 K and in the frequency range from 55 to 585 GHz to obtain microscopic information about the magnetic structure. The results obtained indicate that GdAs is an "easy-plane" antiferromagnet with the magnetic moment lying in the (111) plane below Néel temperature (∼20K). According to an analysis of mean field approximation, the exchange field and the out-of-plane anisotropy field have been estimated to be μ0HE = 8.1T and μ0HA = 1.4T, respectively. The transition field (Hc = 2HE + HA) from the antiferromagnetic to the forced ferromagnetic state is 17.6 T.

KW - Antiferromagnetic resonance

KW - Electron spin resonance

KW - GdAs

KW - Low carrier system

KW - Spin structure

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Antiferromagnetic resonance and magnetic structure of GdAs

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Keywords

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