Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers

J. Szczytko, W. Mac, A. Twardowski, F. Matsukura, H. Ohno

Research output: Contribution to journalArticle

149 Citations (Scopus)

Abstract

The s, p-d exchange interaction of p-type Ga1-xMnxAs(x<0.05) epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic p-d exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration.

Original languageEnglish
Pages (from-to)12935-12939
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number20
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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