TY - JOUR
T1 - Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers
AU - Szczytko, J.
AU - Mac, W.
AU - Twardowski, A.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999
Y1 - 1999
N2 - The s, p-d exchange interaction of p-type Ga1-xMnxAs(x<0.05) epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic p-d exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration.
AB - The s, p-d exchange interaction of p-type Ga1-xMnxAs(x<0.05) epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic p-d exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration.
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U2 - 10.1103/PhysRevB.59.12935
DO - 10.1103/PhysRevB.59.12935
M3 - Article
AN - SCOPUS:0001292447
SN - 0163-1829
VL - 59
SP - 12935
EP - 12939
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
ER -