Abstract
Comprehensive study on electronic and magnetic properties has been performed for doped manganite near the phase boundary of the antiferromagnetic metallic (AFM) state, with changing the nominal hole concentration x and the one-electron bandwidth W. In La1-xSrxMnO3 with maximal W, the ferromagnetic metallic ground state in the low-x region is replaced by the AFM state beyond x=0.54. On the other hand, the charge-ordered insulating (COI) state appears atx∼0.5 for Nd1-xSrxMnOx with reduced W. The COI ground state is overwhelmed by the AFM state with further increasing x (≥0.54) or W. These competitions of the AFM state with the alternative ground states suggest that the AFM state is a fundamental ground state for doped manganites.
Original language | English |
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Pages (from-to) | 5544-5549 |
Number of pages | 6 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 58 |
Issue number | 9 |
Publication status | Published - 1998 Sep 1 |
ASJC Scopus subject areas
- Condensed Matter Physics