Comprehensive study on electronic and magnetic properties has been performed for doped manganite near the phase boundary of the antiferromagnetic metallic (AFM) state, with changing the nominal hole concentration x and the one-electron bandwidth W. In La1-xSrxMnO3 with maximal W, the ferromagnetic metallic ground state in the low-x region is replaced by the AFM state beyond x=0.54. On the other hand, the charge-ordered insulating (COI) state appears atx∼0.5 for Nd1-xSrxMnOx with reduced W. The COI ground state is overwhelmed by the AFM state with further increasing x (≥0.54) or W. These competitions of the AFM state with the alternative ground states suggest that the AFM state is a fundamental ground state for doped manganites.
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1998 Sep 1|
ASJC Scopus subject areas
- Condensed Matter Physics