Antiferromagnetic domain wall creep driven by magnetoelectric effect

Yu Shiratsuchi, Hiroaki Yoshida, Yoshinori Kotani, Kentaro Toyoki, Thi Van Anh Nguyen, Tetsuya Nakamura, Ryoichi Nakatani

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We observed the magnetoelectric induced domain wall propagation in a Pt/Co/Au/Cr 2 O 3 /Pt stacked thin film based on magnetic domain observations using scanning soft X-ray magnetic circular dichroism microscopy. The antiferromagnetic (Cr 2 O 3 ) domain wall velocity was estimated by a quasi-static approach using a pulsed voltage. At a pulse voltage amplitude of -12 V, corresponding to an electric field of -8.0 × 10 2 kV/cm, the domain wall velocity was very low, at 0.3 m/s. The domain wall velocity increased with increasing voltage amplitude, reaching 22 m/s at -20 V (-1.3 × 10 3 kV/cm). The change in the domain wall velocity with the applied voltage amplitude indicates the creep motion of the domain wall. Using a phenomenological model, we estimated the domain wall depinning energy, and found that the bulk and interface terms of the magnetic anisotropy affect the effective magnetic field to the same degree, suggesting that the magnetic domain wall motion may be controllable by the antiferromagnetic layer thickness.

Original languageEnglish
Article number121104
JournalAPL Materials
Volume6
Issue number12
DOIs
Publication statusPublished - 2018 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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  • Cite this

    Shiratsuchi, Y., Yoshida, H., Kotani, Y., Toyoki, K., Nguyen, T. V. A., Nakamura, T., & Nakatani, R. (2018). Antiferromagnetic domain wall creep driven by magnetoelectric effect. APL Materials, 6(12), [121104]. https://doi.org/10.1063/1.5053928