Anomalous transport and electronic properties of Yb4As3 under high pressure

N. Môri, H. Takahashi, Y. Sekine, A. Ochiai, Y. Haga, T. Suzuki, T. Kashiwakura, S. Nakai, M. Nomura

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Yb4As3 shows anomalous transport phenomena below the phase-transition temperature associated with an order-disorder transition due to the atomic arrangement between Yb3+ and Yb2+. Although the LIII spectrum shows no change in valence above and below the temperature, the large increase of the trivalent component has been clearly observed with increasing pressure. Comparing the pressure- and temperature-dependent resistivity between Yb4As3 and Yb4Sb3, it is suggested that the anomalous transport properties of Yb4As3 are due to a characteristic electronic structure modulated with the phase transition.

Original languageEnglish
Pages (from-to)630-634
Number of pages5
JournalPhysica B: Condensed Matter
Volume230-232
DOIs
Publication statusPublished - 1997 Feb
Externally publishedYes

Keywords

  • Heavy electron system
  • Pressure dependence
  • YbAs
  • YbSb

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Môri, N., Takahashi, H., Sekine, Y., Ochiai, A., Haga, Y., Suzuki, T., Kashiwakura, T., Nakai, S., & Nomura, M. (1997). Anomalous transport and electronic properties of Yb4As3 under high pressure. Physica B: Condensed Matter, 230-232, 630-634. https://doi.org/10.1016/S0921-4526(96)00711-9