Anomalous thermal expansion in the metallic phase of SmS under high pressure

K. Iwasa; T. Tokuyama; M. Kohgi; N. K. Sato; N. Môri

doi:10.1016/j.physb.2005.01.018

Anomalous thermal expansion in the metallic phase of SmS under high pressure

K. Iwasa, T. Tokuyama, M. Kohgi, N. K. Sato, N. Môri

SCI - Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

SmS exhibits a pressure-induced phase transition at 0.6 GPa from a semiconducting state to a rather metallic state accompanied with a change of Sm valence and volume compression. Using the X-ray diffraction technique under high pressures, we found local minima of the lattice constant of SmS in the metallic phase up to near 2 GPa. The pressure region of the volume minima coincides with that of the low-temperature increase and the humps of electrical resistivity. We succeeded in reproducing the volume minima by a phenomenological model of a Schottky-type behavior due to electronic gap suppressed by pressure.

Original language	English
Pages (from-to)	148-150
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	359-361
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physb.2005.01.018
Publication status	Published - 2005 Apr 30

Keywords

Pressure-induced semiconductor-metal transition
SmS
Thermal expansion

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2005.01.018

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abstract = "SmS exhibits a pressure-induced phase transition at 0.6 GPa from a semiconducting state to a rather metallic state accompanied with a change of Sm valence and volume compression. Using the X-ray diffraction technique under high pressures, we found local minima of the lattice constant of SmS in the metallic phase up to near 2 GPa. The pressure region of the volume minima coincides with that of the low-temperature increase and the humps of electrical resistivity. We succeeded in reproducing the volume minima by a phenomenological model of a Schottky-type behavior due to electronic gap suppressed by pressure.",

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T1 - Anomalous thermal expansion in the metallic phase of SmS under high pressure

AU - Iwasa, K.

AU - Tokuyama, T.

AU - Kohgi, M.

AU - Sato, N. K.

AU - Môri, N.

PY - 2005/4/30

Y1 - 2005/4/30

N2 - SmS exhibits a pressure-induced phase transition at 0.6 GPa from a semiconducting state to a rather metallic state accompanied with a change of Sm valence and volume compression. Using the X-ray diffraction technique under high pressures, we found local minima of the lattice constant of SmS in the metallic phase up to near 2 GPa. The pressure region of the volume minima coincides with that of the low-temperature increase and the humps of electrical resistivity. We succeeded in reproducing the volume minima by a phenomenological model of a Schottky-type behavior due to electronic gap suppressed by pressure.

AB - SmS exhibits a pressure-induced phase transition at 0.6 GPa from a semiconducting state to a rather metallic state accompanied with a change of Sm valence and volume compression. Using the X-ray diffraction technique under high pressures, we found local minima of the lattice constant of SmS in the metallic phase up to near 2 GPa. The pressure region of the volume minima coincides with that of the low-temperature increase and the humps of electrical resistivity. We succeeded in reproducing the volume minima by a phenomenological model of a Schottky-type behavior due to electronic gap suppressed by pressure.

KW - Pressure-induced semiconductor-metal transition

KW - SmS

KW - Thermal expansion

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DO - 10.1016/j.physb.2005.01.018

M3 - Article

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VL - 359-361

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EP - 150

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - SPEC. ISS.

ER -

Anomalous thermal expansion in the metallic phase of SmS under high pressure

Abstract

Keywords

ASJC Scopus subject areas

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