Abstract
SmS exhibits a pressure-induced phase transition at 0.6 GPa from a semiconducting state to a rather metallic state accompanied with a change of Sm valence and volume compression. Using the X-ray diffraction technique under high pressures, we found local minima of the lattice constant of SmS in the metallic phase up to near 2 GPa. The pressure region of the volume minima coincides with that of the low-temperature increase and the humps of electrical resistivity. We succeeded in reproducing the volume minima by a phenomenological model of a Schottky-type behavior due to electronic gap suppressed by pressure.
Original language | English |
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Pages (from-to) | 148-150 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 359-361 |
Issue number | SPEC. ISS. |
DOIs | |
Publication status | Published - 2005 Apr 30 |
Keywords
- Pressure-induced semiconductor-metal transition
- SmS
- Thermal expansion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering