SmS exhibits a pressure-induced phase transition at 0.6 GPa from a semiconducting state to a rather metallic state accompanied with a change of Sm valence and volume compression. Using the X-ray diffraction technique under high pressures, we found local minima of the lattice constant of SmS in the metallic phase up to near 2 GPa. The pressure region of the volume minima coincides with that of the low-temperature increase and the humps of electrical resistivity. We succeeded in reproducing the volume minima by a phenomenological model of a Schottky-type behavior due to electronic gap suppressed by pressure.
- Pressure-induced semiconductor-metal transition
- Thermal expansion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering