Anomalous thermal expansion in the metallic phase of SmS under high pressure

K. Iwasa, T. Tokuyama, M. Kohgi, N. K. Sato, N. Môri

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

SmS exhibits a pressure-induced phase transition at 0.6 GPa from a semiconducting state to a rather metallic state accompanied with a change of Sm valence and volume compression. Using the X-ray diffraction technique under high pressures, we found local minima of the lattice constant of SmS in the metallic phase up to near 2 GPa. The pressure region of the volume minima coincides with that of the low-temperature increase and the humps of electrical resistivity. We succeeded in reproducing the volume minima by a phenomenological model of a Schottky-type behavior due to electronic gap suppressed by pressure.

Original languageEnglish
Pages (from-to)148-150
Number of pages3
JournalPhysica B: Condensed Matter
Volume359-361
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2005 Apr 30

Keywords

  • Pressure-induced semiconductor-metal transition
  • SmS
  • Thermal expansion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Anomalous thermal expansion in the metallic phase of SmS under high pressure'. Together they form a unique fingerprint.

Cite this