Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

Research output: Contribution to journalArticlepeer-review

Abstract

We present our observation of an anomalous temperature and optical excitation intensity dependence of the electron tunneling between a two-dimensional electron gas (2DEG) and Si dots in the direct tunneling mode. We find that the gate voltages required for the electron injection from the 2DEG to Si-dots become smaller with increase in the temperature or in the optical excitation intensity. The experimental results are discussed in terms of the geometrical matching of the wave functions of a 2DEG and an electron in a Si-dot.

Original languageEnglish
Pages (from-to)918-921
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number4
DOIs
Publication statusPublished - 2010 Feb

Keywords

  • 2DEG
  • Quantum dot
  • Si
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots'. Together they form a unique fingerprint.

Cite this