Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex Si quantum wells mediated by atomic hydrogen

G. Ohta, S. Fukatsu, N. Usami, Y. Shiraki, T. Hattori

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    3 Citations (Scopus)


    An anomalous peak shift was observed in photoluminescence (PL) of Si1-xGex Si quantum wells (QW) with abrupt compositional interfaces formed by solid source molecular beam epitaxy (SSMBE) with atomic hydrogen (AH). It is found that MBE growth of QWs on Si(100) with AH leads to a considerable spectral blue-shift in conflict with the predicted red-shift associated with an abrupt interface. This was found to be caused by well width reduction due to selective etching of Si by AH during MBE. In contrast, strained Si1-xGex Si QWs grown on Si(110) using AH revealed an apparent spectral red-shift in good agreement with the abrupt interface formation through the suppression of the Ge surface segregation with AH. The result seems to be explained as due to a reduced Si etch rate of Si on the Si(110) surface compared to Si(100).

    Original languageEnglish
    Pages (from-to)36-39
    Number of pages4
    JournalJournal of Crystal Growth
    Issue number1-4
    Publication statusPublished - 1995 Dec 2

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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