Abstract
The Hall coefficient of CeP is found to change in sign from negative to positive with increasing pressure. This result clearly indicates the fact that there exists a successive electronic transition from a dense Kondo to a normal metal through a mixed-valence state. For Yb4As3, the huge peak in the temperature-dependent Hall coefficient is found to decrease with increasing pressure. This result indicates that the anomalous temperature-dependent resistivity is primarily caused by the carrier concentration depending strongly on temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 548-550 |
| Number of pages | 3 |
| Journal | Physica B: Physics of Condensed Matter |
| Volume | 199-200 |
| Issue number | C |
| DOIs | |
| Publication status | Published - 1994 Apr 2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Môri, N., Okayama, Y., Okunuki, Y., Haga, Y., Ochiai, A., & Suzuki, T. (1994). Anomalous pressure-temperature-dependent Hall constants in CeP and Yb4As3. Physica B: Physics of Condensed Matter, 199-200(C), 548-550. https://doi.org/10.1016/0921-4526(94)91900-3