Abstract
The Hall coefficient of CeP is found to change in sign from negative to positive with increasing pressure. This result clearly indicates the fact that there exists a successive electronic transition from a dense Kondo to a normal metal through a mixed-valence state. For Yb4As3, the huge peak in the temperature-dependent Hall coefficient is found to decrease with increasing pressure. This result indicates that the anomalous temperature-dependent resistivity is primarily caused by the carrier concentration depending strongly on temperature.
Original language | English |
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Pages (from-to) | 548-550 |
Number of pages | 3 |
Journal | Physica B: Physics of Condensed Matter |
Volume | 199-200 |
Issue number | C |
DOIs | |
Publication status | Published - 1994 Apr 2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering