Anomalous pressure-temperature-dependent Hall constants in CeP and Yb4As3

N. Môri, Y. Okayama, Y. Okunuki, Y. Haga, Akira Ochiai, T. Suzuki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The Hall coefficient of CeP is found to change in sign from negative to positive with increasing pressure. This result clearly indicates the fact that there exists a successive electronic transition from a dense Kondo to a normal metal through a mixed-valence state. For Yb4As3, the huge peak in the temperature-dependent Hall coefficient is found to decrease with increasing pressure. This result indicates that the anomalous temperature-dependent resistivity is primarily caused by the carrier concentration depending strongly on temperature.

Original languageEnglish
Pages (from-to)548-550
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume199-200
Issue numberC
DOIs
Publication statusPublished - 1994 Apr 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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