The Hall coefficient of CeP is found to change in sign from negative to positive with increasing pressure. This result clearly indicates the fact that there exists a successive electronic transition from a dense Kondo to a normal metal through a mixed-valence state. For Yb4As3, the huge peak in the temperature-dependent Hall coefficient is found to decrease with increasing pressure. This result indicates that the anomalous temperature-dependent resistivity is primarily caused by the carrier concentration depending strongly on temperature.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering