Anomalous pressure effect in heteroacene organic field-effect transistors

K. Sakai, Y. Okada, S. Kitaoka, J. Tsurumi, Y. Ohishi, A. Fujiwara, K. Takimiya, J. Takeya

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Abstract

Anomalous pressure dependent conductivity is revealed for heteroacene organic field-effect transistors of dinaphtho[2, 3-b:2, 3 -f]thieno[3, 2-b]thiophene single crystals in the direction of a and b crystallographic axes. In contrast to the normal characteristics of a monotonic increase in mobility μ with the application of external hydrostatic pressure P in conductors, we found that the present organic semiconductor devices exhibit nonmonotonic and gigantic pressure dependence including an even negative pressure coefficient dμ/dP. In combination with a structural analysis based on x-ray diffraction experiments under pressure, it is suggested that on-site molecular orientation and displacement peculiar in heteroacene molecules are responsible for the anomalous pressure effect.

Original languageEnglish
Article number096603
JournalPhysical review letters
Volume110
Issue number9
DOIs
Publication statusPublished - 2013 Feb 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Sakai, K., Okada, Y., Kitaoka, S., Tsurumi, J., Ohishi, Y., Fujiwara, A., Takimiya, K., & Takeya, J. (2013). Anomalous pressure effect in heteroacene organic field-effect transistors. Physical review letters, 110(9), [096603]. https://doi.org/10.1103/PhysRevLett.110.096603