Anomalous pressure dependence of light emission in cubic InGaN

S. P. Łepkowski; T. Suski; H. Teisseyre; T. Kitamura; Y. Ishida; H. Okumura; T. Onuma; T. Koida; S. F. Chichibu

doi:10.1002/pssc.200303294

Anomalous pressure dependence of light emission in cubic InGaN

S. P. Łepkowski, T. Suski, H. Teisseyre, T. Kitamura, Y. Ishida, H. Okumura, T. Onuma, T. Koida, S. F. Chichibu

Research output: Contribution to journal › Conference article › peer-review

Abstract

Hydrostatic pressure studies of photoluminescence from thick strained and unstrained epitaxial layers of cubic InGaN were performed. For strained In _xGa_1-xN films (x = 0.02-0.21) measured values of the pressure coefficients of emission energy, dE_E/dP, showed (i) surprisingly low magnitude and (ii) a drastic decrease with increasing x. Moreover, for a relaxed layer of cubic In_0.09Ga_0.91N, a much higher dE_E/dP is found than for a strained layer with the same composition. The proposed interpretation of the experimental results consists of two factors. First, a built-in biaxial strain due to lattice mismatch reduces dE_E/dP. The nonlinear dependence of stress on strain has to be applied here. Second, the presence of In-rich fluctuations in InGaN layers causes light emission from regions of lower band gap, i.e., higher x value and lower dE_E/dP, with respect to the regions with nominal In content.

Original language	English
Pages (from-to)	2682-2685
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303294
Publication status	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200303294

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title = "Anomalous pressure dependence of light emission in cubic InGaN",

abstract = "Hydrostatic pressure studies of photoluminescence from thick strained and unstrained epitaxial layers of cubic InGaN were performed. For strained In xGa1-xN films (x = 0.02-0.21) measured values of the pressure coefficients of emission energy, dEE/dP, showed (i) surprisingly low magnitude and (ii) a drastic decrease with increasing x. Moreover, for a relaxed layer of cubic In0.09Ga0.91N, a much higher dEE/dP is found than for a strained layer with the same composition. The proposed interpretation of the experimental results consists of two factors. First, a built-in biaxial strain due to lattice mismatch reduces dEE/dP. The nonlinear dependence of stress on strain has to be applied here. Second, the presence of In-rich fluctuations in InGaN layers causes light emission from regions of lower band gap, i.e., higher x value and lower dEE/dP, with respect to the regions with nominal In content.",

author = "{\L}epkowski, {S. P.} and T. Suski and H. Teisseyre and T. Kitamura and Y. Ishida and H. Okumura and T. Onuma and T. Koida and Chichibu, {S. F.}",

year = "2003",

doi = "10.1002/pssc.200303294",

language = "English",

pages = "2682--2685",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Anomalous pressure dependence of light emission in cubic InGaN

AU - Łepkowski, S. P.

AU - Suski, T.

AU - Teisseyre, H.

AU - Kitamura, T.

AU - Ishida, Y.

AU - Okumura, H.

AU - Onuma, T.

AU - Koida, T.

AU - Chichibu, S. F.

PY - 2003

Y1 - 2003

N2 - Hydrostatic pressure studies of photoluminescence from thick strained and unstrained epitaxial layers of cubic InGaN were performed. For strained In xGa1-xN films (x = 0.02-0.21) measured values of the pressure coefficients of emission energy, dEE/dP, showed (i) surprisingly low magnitude and (ii) a drastic decrease with increasing x. Moreover, for a relaxed layer of cubic In0.09Ga0.91N, a much higher dEE/dP is found than for a strained layer with the same composition. The proposed interpretation of the experimental results consists of two factors. First, a built-in biaxial strain due to lattice mismatch reduces dEE/dP. The nonlinear dependence of stress on strain has to be applied here. Second, the presence of In-rich fluctuations in InGaN layers causes light emission from regions of lower band gap, i.e., higher x value and lower dEE/dP, with respect to the regions with nominal In content.

AB - Hydrostatic pressure studies of photoluminescence from thick strained and unstrained epitaxial layers of cubic InGaN were performed. For strained In xGa1-xN films (x = 0.02-0.21) measured values of the pressure coefficients of emission energy, dEE/dP, showed (i) surprisingly low magnitude and (ii) a drastic decrease with increasing x. Moreover, for a relaxed layer of cubic In0.09Ga0.91N, a much higher dEE/dP is found than for a strained layer with the same composition. The proposed interpretation of the experimental results consists of two factors. First, a built-in biaxial strain due to lattice mismatch reduces dEE/dP. The nonlinear dependence of stress on strain has to be applied here. Second, the presence of In-rich fluctuations in InGaN layers causes light emission from regions of lower band gap, i.e., higher x value and lower dEE/dP, with respect to the regions with nominal In content.

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U2 - 10.1002/pssc.200303294

DO - 10.1002/pssc.200303294

M3 - Conference article

AN - SCOPUS:84875095409

SN - 1610-1634

SP - 2682

EP - 2685

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Anomalous pressure dependence of light emission in cubic InGaN

Abstract

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