Anomalous pressure dependence of light emission in cubic InGaN

S. P. Łepkowski, T. Suski, H. Teisseyre, T. Kitamura, Y. Ishida, H. Okumura, T. Onuma, T. Koida, S. F. Chichibu

Research output: Contribution to journalConference articlepeer-review

Abstract

Hydrostatic pressure studies of photoluminescence from thick strained and unstrained epitaxial layers of cubic InGaN were performed. For strained In xGa1-xN films (x = 0.02-0.21) measured values of the pressure coefficients of emission energy, dEE/dP, showed (i) surprisingly low magnitude and (ii) a drastic decrease with increasing x. Moreover, for a relaxed layer of cubic In0.09Ga0.91N, a much higher dEE/dP is found than for a strained layer with the same composition. The proposed interpretation of the experimental results consists of two factors. First, a built-in biaxial strain due to lattice mismatch reduces dEE/dP. The nonlinear dependence of stress on strain has to be applied here. Second, the presence of In-rich fluctuations in InGaN layers causes light emission from regions of lower band gap, i.e., higher x value and lower dEE/dP, with respect to the regions with nominal In content.

Original languageEnglish
Pages (from-to)2682-2685
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

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