Anomalous Nernst effect of Fe3 O4 single crystal

R. Ramos, M. H. Aguirre, A. Anadón, J. Blasco, I. Lucas, K. Uchida, P. A. Algarabel, L. Morellón, E. Saitoh, M. R. Ibarra

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Abstract

We report a complete characterization of the anomalous Nernst effect (ANE) and its relationship with the anomalous Hall effect (AHE) in Fe3O4. By combining full thermoelectric and electric transport measurements as a function of temperature, we have verified that the universal scaling relation between the anomalous Hall and diagonal conductivities (σzy σzz1.6), observed in materials with bad-metal-hopping type of conduction, is also applicable to the thermoelectric transport. We further show that the ANE and AHE are commonly related through the Mott relation, therefore demonstrating its validity for anomalous transport phenomena in materials with conduction in the the dirty regime.

Original languageEnglish
Article number054422
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number5
DOIs
Publication statusPublished - 2014 Aug 26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Ramos, R., Aguirre, M. H., Anadón, A., Blasco, J., Lucas, I., Uchida, K., Algarabel, P. A., Morellón, L., Saitoh, E., & Ibarra, M. R. (2014). Anomalous Nernst effect of Fe3 O4 single crystal. Physical Review B - Condensed Matter and Materials Physics, 90(5), [054422]. https://doi.org/10.1103/PhysRevB.90.054422