The differential resistance in an InAs-inserted-channel InAlAs/InGaAs heterostructure coupled superconducting junction is enhanced within the Nb superconducting gap energy by applying a magnetic field. The enhancement saturates under a magnetic field of several mT. This behavior suggests that the pair-potential in the InAs-channel is induced by the superconducting proximity effect. The magnetic field reduces the penetration of the pair-potential and the Andreev reflection probability, which causes the enhancement of the differential resistance.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering