TY - JOUR
T1 - Anomalous Hall effect in polycrystalline Mn3Sn thin films
AU - Ikeda, Tomoki
AU - Tsunoda, Masakiyo
AU - Oogane, Mikihiko
AU - Oh, Seungjun
AU - Morita, Tadashi
AU - Ando, Yasuo
N1 - Funding Information:
This work was supported in part by the Center for Science and Innovation in Spintronics and the Center for Spintronics Research Network, Tohoku University.
Publisher Copyright:
© 2018 Author(s).
PY - 2018/11/26
Y1 - 2018/11/26
N2 - A polycrystalline Mn3Sn thin film was fabricated on a Si/SiO2 substrate by radio frequency magnetron sputtering with co-deposition from Mn and Sn targets followed by a thermal annealing process in vacuum. From a structural analysis by transmission electron microscopy, the Mn2Sn phase was found to co-exist in the film. The thin film exhibited weak ferromagnetic behavior, and the saturation magnetization, MS, of the ferromagnetic component of the Mn3Sn phase was about 10 emu/cc at room temperature, which is six times larger than the reported value for bulk Mn3Sn single crystals. MS significantly increased below 250 K, corresponding to the Curie temperature of Mn2Sn. An anomalous Hall effect (AHE) was observed in the film in the examined temperature range of 50 K to 350 K. The anomalous Hall conductivity, σAH, was negative at room temperature like the bulk Mn3Sn, and the estimated value of -18.5 Ω-1·cm-1 was comparable to that of the bulk Mn3Sn. The sign of AHE was changed to positive below 240 K, which might be caused by the co-existing Mn2Sn phase. We thus concluded that a large AHE in antiferromagnetic materials was observed in a thin film form of Mn3Sn.
AB - A polycrystalline Mn3Sn thin film was fabricated on a Si/SiO2 substrate by radio frequency magnetron sputtering with co-deposition from Mn and Sn targets followed by a thermal annealing process in vacuum. From a structural analysis by transmission electron microscopy, the Mn2Sn phase was found to co-exist in the film. The thin film exhibited weak ferromagnetic behavior, and the saturation magnetization, MS, of the ferromagnetic component of the Mn3Sn phase was about 10 emu/cc at room temperature, which is six times larger than the reported value for bulk Mn3Sn single crystals. MS significantly increased below 250 K, corresponding to the Curie temperature of Mn2Sn. An anomalous Hall effect (AHE) was observed in the film in the examined temperature range of 50 K to 350 K. The anomalous Hall conductivity, σAH, was negative at room temperature like the bulk Mn3Sn, and the estimated value of -18.5 Ω-1·cm-1 was comparable to that of the bulk Mn3Sn. The sign of AHE was changed to positive below 240 K, which might be caused by the co-existing Mn2Sn phase. We thus concluded that a large AHE in antiferromagnetic materials was observed in a thin film form of Mn3Sn.
UR - http://www.scopus.com/inward/record.url?scp=85057552996&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057552996&partnerID=8YFLogxK
U2 - 10.1063/1.5051495
DO - 10.1063/1.5051495
M3 - Article
AN - SCOPUS:85057552996
VL - 113
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
M1 - 222405
ER -