Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor

Hidemi Toyosaki, Tomoteru Fukumura, Yasuhiro Yamada, Kiyomi Nakajima, Toyohiro Chikyow, Tetsuya Hasegawa, Hideomi Koinuma, Masashi Kawasaki

Research output: Contribution to journalArticlepeer-review

209 Citations (Scopus)

Abstract

Ferromagnetic semiconductors are believed to be suitable for future spintronics, because both charge and spin degrees of freedom1,2 can be manipulated by external stimuli. One of the most important characteristics of ferromagnetic semiconductors is the anomalous Hall effect. This is because the ferromagnetically spin-polarized carrier can be probed and controlled electrically, leading to direct application for electronics. Control of the Curie temperature3 and magnetization direction4 by electronic field, and photo-induced ferromagnetism5 have been performed successfully using the anomalous Hall effect for group III-V ferromagnetic semiconductors. In these cases, the operation temperature was much below room temperature because of the limited Curie temperature of less than 160 K (ref. 6). Here, we report on the anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor, rutile Ti1-xCoxO2-δ (of oxygen deficiency δ). This result manifests the intrinsic nature of ferromagnetism in this compound, and represents the possible realization of transparent semiconductor spintronics devices operable at room temperature.

Original languageEnglish
Pages (from-to)221-224
Number of pages4
JournalNature Materials
Volume3
Issue number4
DOIs
Publication statusPublished - 2004 Apr

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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