Anomalous diffraction effect on the surface core-level photoemission from Si(001)2 × 1-Cs surface

T. Abukawa, L. S.O. Johansson, E. L. Bullock, L. Patthey, S. Kono

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The angular dependence of the Si 2p photoelectron intensity has been measured for a Cs-saturated Si(001)2 × 1 surface. A surface Si 2p component, which is attributed to the Si-dimer underneath the Cs overlayer, shows a large intensity variation as a function of azimuthal angle. This denies the asymmetrical Si-dimer model proposed recently [Y.-C. Chao, L.S.O. Johansson, R.I.G. Uhrberg, Phys. Rev. B 54 (1996) 5901] on the basis of photoemission intensity of the surface Si 2p component. The present result shows that the effect of photoelectron diffraction must be taken into account when discussing the origin of a surface component from a seemingly angle-integrated photoemission intensity of the surface component.

Original languageEnglish
Pages (from-to)539-543
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume88-91
DOIs
Publication statusPublished - 1998 Mar

Keywords

  • Layer attenuation model
  • Photoelectron diffraction
  • Photoemission intensity
  • Surface core-level shifts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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