Abstract
We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen-related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles.
Original language | English |
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Pages (from-to) | 1928-1930 |
Number of pages | 3 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 7 |
Issue number | 7-8 |
DOIs | |
Publication status | Published - 2010 Aug 26 |
Externally published | Yes |
Event | 8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: 2009 Oct 18 → 2009 Oct 23 |
Keywords
- Electrical properties
- Group-III nitrides
- Interface formation
- Schottky barrier
- Semiconductor-semiconductor junction
ASJC Scopus subject areas
- Condensed Matter Physics