Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen

Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen-related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles.

Original languageEnglish
Pages (from-to)1928-1930
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7-8
Publication statusPublished - 2010 Aug 26
Externally publishedYes
Event8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of
Duration: 2009 Oct 182009 Oct 23


  • Electrical properties
  • Group-III nitrides
  • Interface formation
  • Schottky barrier
  • Semiconductor-semiconductor junction

ASJC Scopus subject areas

  • Condensed Matter Physics


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