Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen

Yoshihiro Irokawa; Nobuyuki Matsuki; Masatomo Sumiya; Yoshiki Sakuma; Takashi Sekiguchi; Toyohiro Chikyo; Yasunobu Sumida; Yoshitaka Nakano

doi:10.1002/pssc.200983411

Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen

Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen-related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles.

Original language	English
Pages (from-to)	1928-1930
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.200983411
Publication status	Published - 2010 Aug 26
Externally published	Yes
Event	8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: 2009 Oct 18 → 2009 Oct 23

Keywords

Electrical properties
Group-III nitrides
Interface formation
Schottky barrier
Semiconductor-semiconductor junction

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200983411

Cite this

@article{41386d5c32cc4d31b47904218065d314,

title = "Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen",

abstract = "We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen-related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles.",

keywords = "Electrical properties, Group-III nitrides, Interface formation, Schottky barrier, Semiconductor-semiconductor junction",

author = "Yoshihiro Irokawa and Nobuyuki Matsuki and Masatomo Sumiya and Yoshiki Sakuma and Takashi Sekiguchi and Toyohiro Chikyo and Yasunobu Sumida and Yoshitaka Nakano",

year = "2010",

month = aug,

day = "26",

doi = "10.1002/pssc.200983411",

language = "English",

volume = "7",

pages = "1928--1930",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7-8",

note = "8th International Conference on Nitride Semiconductors, ICNS-8 ; Conference date: 18-10-2009 Through 23-10-2009",

}

TY - JOUR

T1 - Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen

AU - Irokawa, Yoshihiro

AU - Matsuki, Nobuyuki

AU - Sumiya, Masatomo

AU - Sakuma, Yoshiki

AU - Sekiguchi, Takashi

AU - Chikyo, Toyohiro

AU - Sumida, Yasunobu

AU - Nakano, Yoshitaka

PY - 2010/8/26

Y1 - 2010/8/26

N2 - We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen-related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles.

AB - We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen-related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles.

KW - Electrical properties

KW - Group-III nitrides

KW - Interface formation

KW - Schottky barrier

KW - Semiconductor-semiconductor junction

UR - http://www.scopus.com/inward/record.url?scp=77955812777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955812777&partnerID=8YFLogxK

U2 - 10.1002/pssc.200983411

DO - 10.1002/pssc.200983411

M3 - Conference article

AN - SCOPUS:77955812777

VL - 7

SP - 1928

EP - 1930

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7-8

T2 - 8th International Conference on Nitride Semiconductors, ICNS-8

Y2 - 18 October 2009 through 23 October 2009

ER -

Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this