Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Shunpei Takeshita, Sadashige Matsuo, Takahiro Tanaka, Shu Nakaharai, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Tomonori Arakawa, Kensuke Kobayashi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.

Original languageEnglish
Article number103106
JournalApplied Physics Letters
Volume108
Issue number10
DOIs
Publication statusPublished - 2016 Mar 7
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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