Anodization of GaAs and Si substrate in oxygen plasma is a promising technique as a low temperature and dry process to grow the native oxide film on the substrate. The oxygen plasma can be generated by either high frequency electric discharge or DC electric discharge. One of the advantages of this process is a fast oxidation rate, depending on the substrate temperature and the anodization current. In anodization of GaAs it has been found that the oxygen does not move across the oxide and, therefore, positive Ga and As ions, positively charged oxygen vacancies, and negatively charged Ga and As ions are possible mobile species.
|Number of pages||75|
|Journal||Journal of the Faculty of Engineering, University of Tokyo, Series B|
|Publication status||Published - 1980 Jan 1|
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