ANODIZATION OF GaAs AND Si IN OXYGEN PLASMA AND ITS APPLICATION TO THE FABRICATION OF DEVICES AND INTEGRATED CIRCUITS.

Takuo Sugano, Fusako Koshiga, Kimiyoshi Yamasaki, Quoc Vu Ho, Yoshiro Hirayama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Anodization of GaAs and Si substrate in oxygen plasma is a promising technique as a low temperature and dry process to grow the native oxide film on the substrate. The oxygen plasma can be generated by either high frequency electric discharge or DC electric discharge. One of the advantages of this process is a fast oxidation rate, depending on the substrate temperature and the anodization current. In anodization of GaAs it has been found that the oxygen does not move across the oxide and, therefore, positive Ga and As ions, positively charged oxygen vacancies, and negatively charged Ga and As ions are possible mobile species.

Original languageEnglish
Pages (from-to)553-627
Number of pages75
JournalJournal of the Faculty of Engineering, University of Tokyo, Series B
Volume35
Issue number4
Publication statusPublished - 1980 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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