Anodic oxide gate a-Si:H MOSFET

H. Yamamoto, T. Sawada, S. Arimoto, H. Hasegawa, H. Ohno

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.

Original languageEnglish
Pages (from-to)607-608
Number of pages2
JournalElectronics Letters
Volume19
Issue number16
DOIs
Publication statusPublished - 1983 Aug 4
Externally publishedYes

Keywords

  • Anodic oxidation
  • Hydrogenated amorphous silicon
  • Semiconducting devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Yamamoto, H., Sawada, T., Arimoto, S., Hasegawa, H., & Ohno, H. (1983). Anodic oxide gate a-Si:H MOSFET. Electronics Letters, 19(16), 607-608. https://doi.org/10.1049/el:19830413