Anodic oxide gate a-Si:H MOSFET

H. Yamamoto; T. Sawada; S. Arimoto; H. Hasegawa; H. Ohno

doi:10.1049/el:19830413

Anodic oxide gate a-Si:H MOSFET

H. Yamamoto, T. Sawada, S. Arimoto, H. Hasegawa, H. Ohno

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al₂O₃ native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm²/Vs after proper low-temperature annealing in H₂. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.

Original language	English
Pages (from-to)	607-608
Number of pages	2
Journal	Electronics Letters
Volume	19
Issue number	16
DOIs	https://doi.org/10.1049/el:19830413
Publication status	Published - 1983 Aug 4
Externally published	Yes

Keywords

Anodic oxidation
Hydrogenated amorphous silicon
Semiconducting devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Anodic oxide gate a-Si:H MOSFET",

abstract = "The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.",

keywords = "Anodic oxidation, Hydrogenated amorphous silicon, Semiconducting devices and materials",

author = "H. Yamamoto and T. Sawada and S. Arimoto and H. Hasegawa and H. Ohno",

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T1 - Anodic oxide gate a-Si:H MOSFET

AU - Yamamoto, H.

AU - Sawada, T.

AU - Arimoto, S.

AU - Hasegawa, H.

AU - Ohno, H.

PY - 1983/8/4

Y1 - 1983/8/4

N2 - The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.

AB - The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.

KW - Anodic oxidation

KW - Hydrogenated amorphous silicon

KW - Semiconducting devices and materials

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DO - 10.1049/el:19830413

M3 - Article

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EP - 608

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 16

ER -

Anodic oxide gate a-Si:H MOSFET

Abstract

Keywords

ASJC Scopus subject areas

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