Abstract
The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.
Original language | English |
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Pages (from-to) | 607-608 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 19 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1983 Aug 4 |
Externally published | Yes |
Keywords
- Anodic oxidation
- Hydrogenated amorphous silicon
- Semiconducting devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering