Anodic oxidation of a-Si: H films

H. Yamamoto, S. Arimoto, H. Hasegawa, H. Ohno, J. Nanjo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

It is shown that thick native oxide layers (up to 2500 Å) can be grown on a-Si: H films at room temperature by anodic oxidation. Ellipsometric measurements indicate uniformity of the oxide layer with a refractive index of 1-46. The voltage growth rate is found to be 5.3 Å/V.

Original languageEnglish
Pages (from-to)6-7
Number of pages2
JournalElectronics Letters
Volume19
Issue number1
DOIs
Publication statusPublished - 1983 Jan 6
Externally publishedYes

Keywords

  • Anodic oxidation
  • Hydrogenated amorphous silicon
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Yamamoto, H., Arimoto, S., Hasegawa, H., Ohno, H., & Nanjo, J. (1983). Anodic oxidation of a-Si: H films. Electronics Letters, 19(1), 6-7. https://doi.org/10.1049/el:19830005