Anodic oxidation allows formation of uniform thin and thick SiO//2 and Al//2O//3/SiO//2 insulating layers on amorphous silicon films at room temperature. The process is stable, reproducible and electrically controllable. Oxidation process, insulator properties and application to material assessment and device fabrication are reviewed here. Anodic oxidation has been applied to MIS and p-i-n type a-Si solar cells for efficiency enhancement and material defect passivation. a-Si MOS FFTs and PSDs (position sensitive detectors) have also been fabricated for the first time with good device performance, indicating feasibility of new-type integrated planar functional devices based on anodic oxidation.
|Title of host publication||Japan Annual Reviews in Electronics, Computers & Telecommunications|
|Number of pages||12|
|Publication status||Published - 1984|
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