ANODIC OXIDATION AND ITS DEVICE APPLICATIONS.

Hideki Hasegawa, Hidekazu Yamamoto, Satoshi Arimoto, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

Anodic oxidation allows formation of uniform thin and thick SiO//2 and Al//2O//3/SiO//2 insulating layers on amorphous silicon films at room temperature. The process is stable, reproducible and electrically controllable. Oxidation process, insulator properties and application to material assessment and device fabrication are reviewed here. Anodic oxidation has been applied to MIS and p-i-n type a-Si solar cells for efficiency enhancement and material defect passivation. a-Si MOS FFTs and PSDs (position sensitive detectors) have also been fabricated for the first time with good device performance, indicating feasibility of new-type integrated planar functional devices based on anodic oxidation.

Original languageEnglish
Title of host publicationJapan Annual Reviews in Electronics, Computers & Telecommunications
PublisherNorth-Holland
Pages252-263
Number of pages12
Volume16
ISBN (Print)0444875840
Publication statusPublished - 1984
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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