Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

Masashi Suezawa, Ken Ichi Kojima, Atsuo Kasuya, Ichiro Yonenaga, Noritaka Usami

Research output: Contribution to journalArticlepeer-review

Abstract

We observed the annihilation of boron-hydrogen (BH) pairs and gallium-hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.

Original languageEnglish
Pages (from-to)9162-9166
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number12
DOIs
Publication statusPublished - 2006 Dec 15

Keywords

  • Acceptor
  • Complex
  • Electron irradiation
  • Hydrogen
  • Interstitial
  • Pair
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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