Annealing-temperature dependence: Mechanism of Hf silicidation in HfO 2 gate insulators on Si by core-level photoemission spectroscopy

S. Toyoda, J. Okabayashi, H. Takahashi, H. Kumigashira, M. Oshima, M. Niwa, K. Usuda, G. L. Liu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We have investigated the mechanism of Hf silicidation from Hf O2 gate insulators on Si by high-resolution core-level photoemission spectroscopy with detailed annealing-temperature controlling. We have found that the silicidation temperature depends on the difference of the chemical states at the interfacial layer. The Hf-silicate layer which is more stable than the Si O2 layer prevents the silicidation. In addition, silicidation processes also promote the formation of Si O2. Chemical shifts in core-level photoemission spectra depend on the interfacial-layer thickness and Si O2 concentration in the Hf O2 top layer, which are tunable by detailed annealing temperature.

Original languageEnglish
Article number014901
JournalJournal of Applied Physics
Volume99
Issue number1
DOIs
Publication statusPublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Annealing-temperature dependence: Mechanism of Hf silicidation in HfO <sub>2</sub> gate insulators on Si by core-level photoemission spectroscopy'. Together they form a unique fingerprint.

Cite this