Annealing temperature and Co layer thickness dependence of magnetoresistance effect for L1 0-MnGa/Co/MgO/CoFeB perpendicular magnetic tunnel junctions

Q. L. Ma, T. Kubota, S. Mizukami, X. M. Zhang, M. Oogane, H. Naganuma, Y. Ando, T. Miyazaki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The post annealing temperature and Co thickness dependence of tunnel magnetoresistance (TMR) ratio was investigated for L1 0-MnGa/Co(t co)/MgO/CoFeB perpendicular magnetic tunnel junctions (MTJs). The MnGa/MgO interface optimization by Co insertion was shown to be an effective way for improving the TMR ratio. The TMR value increases with the annealing temperature (T a), and exhibits maxima at 325 °C for t co) = 1.0 - 5.0 nm. Thermal annealing process improves the structure of MTJs, but also causes elements diffusion. In this work, the annealing effect on MTJs with different Co thicknesses was discussed in detail along with a fast annealing method.

Original languageEnglish
Article number6332842
Pages (from-to)2808-2811
Number of pages4
JournalIEEE Transactions on Magnetics
Volume48
Issue number11
DOIs
Publication statusPublished - 2012

Keywords

  • L1 MnGa
  • Perpendicular magnetic tunnel junctions (MTJs) MnGa

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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