Annealing reaction for Ni silicidation of Si nanowire

H. Arai, H. Kamimura, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, K. Natori, Takeo Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Silicidation of Si Nanowires (Si NWs) has been investigated in terms of the encroachment length of Ni suicide from the edge of exposed Si NWs. Ni suicides were formed by the reaction of Si NW and Ni layer by low temperature RTA processes. The time dependence of the encroachment length revealed that this phenomenon is governed by the diffusion of species. Activation energy of the diffusion on changing NW width from 10 nm to 23nm were estimated to be 1.48-1.60 eV using 30-nm-thick (100) SOI substrate. The estimated activation energy using 30nm-thick (100) SOI substrate are larger than 1.23 eV of (100) bulk Si (1). We also investigate Ni silicidation of Si NW using two step annealing process. The encroachment length of Ni suicide is dramatically suppressed for the two step annealing process.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages447-454
Number of pages8
Edition7
DOIs
Publication statusPublished - 2009
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number7
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Arai, H., Kamimura, H., Sato, S., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2009). Annealing reaction for Ni silicidation of Si nanowire. In ECS Transactions - ULSI Process Integration 6 (7 ed., pp. 447-454). (ECS Transactions; Vol. 25, No. 7). https://doi.org/10.1149/1.3203982