Annealing properties of open volumes in HfSiO x and HfAlO x gate dielectrics studied using monoenergetic positron beams

A. Uedono, K. Ikeuchi, K. Yamabe, T. Ohdaira, M. Muramatsu, R. Suzuki, A. S. Hamid, T. Chikyow, K. Torii, K. Yamada

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Fingerprint Dive into the research topics of 'Annealing properties of open volumes in HfSiO <sub>x</sub> and HfAlO <sub>x</sub> gate dielectrics studied using monoenergetic positron beams'. Together they form a unique fingerprint.

Physics & Astronomy