Annealing-induced interfacial reactions between gate electrodes and HfO 2 /Si gate stacks studied by synchrotron radiation photoemission spectroscopy

H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have investigated the interfacial reactions between gate electrodes (polycrystalline-Si and TiN) and HfO 2 /Si gate stacks by annealing in ultrahigh vacuum using synchrotron radiation photoemission spectroscopy. Hf 4f high-resolution photoemission spectra have revealed that a Hf-silicide formation starts at temperature 900 °C for a HfO 2 /Si structure without a gate electrode. On the other hand, in the case of a polycrystalline-Si/HfO 2 /Si gate stack structure, the silicidation occurs at as low temperature as 700 °C. It is derived from the Si sub oxide which is formed at the polycrystalline-Si/HfO 2 interface by the oxygen diffusion from HfO 2 to polycrystalline-Si. In the case of a TiN/HfO 2 /Si gate stack structure, Hf nitridation occurs at 700 °C, and HfN is formed selectively by further annealing above 800 °C.

Original languageEnglish
Title of host publicationSYNCHROTRON RADIATION INSTRUMENTATION
Subtitle of host publicationNinth International Conference on Synchrotron Radiation Instrumentation
Pages1569-1572
Number of pages4
DOIs
Publication statusPublished - 2007 Mar 26
Externally publishedYes
EventSYNCHROTRON RADIATION INSTRUMENTATION: 9th International Conference on Synchrotron Radiation Instrumentation - Daegu, Korea, Republic of
Duration: 2006 May 282006 Jun 28

Publication series

NameAIP Conference Proceedings
Volume879
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherSYNCHROTRON RADIATION INSTRUMENTATION: 9th International Conference on Synchrotron Radiation Instrumentation
CountryKorea, Republic of
CityDaegu
Period06/5/2806/6/28

Keywords

  • High-k
  • Metal gate
  • Photoemission spectroscopy
  • Poly-Si

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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