@inproceedings{a4581d1bc44146ef80236e48d7927112,
title = " Annealing-induced interfacial reactions between gate electrodes and HfO 2 /Si gate stacks studied by synchrotron radiation photoemission spectroscopy ",
abstract = " We have investigated the interfacial reactions between gate electrodes (polycrystalline-Si and TiN) and HfO 2 /Si gate stacks by annealing in ultrahigh vacuum using synchrotron radiation photoemission spectroscopy. Hf 4f high-resolution photoemission spectra have revealed that a Hf-silicide formation starts at temperature 900 °C for a HfO 2 /Si structure without a gate electrode. On the other hand, in the case of a polycrystalline-Si/HfO 2 /Si gate stack structure, the silicidation occurs at as low temperature as 700 °C. It is derived from the Si sub oxide which is formed at the polycrystalline-Si/HfO 2 interface by the oxygen diffusion from HfO 2 to polycrystalline-Si. In the case of a TiN/HfO 2 /Si gate stack structure, Hf nitridation occurs at 700 °C, and HfN is formed selectively by further annealing above 800 °C.",
keywords = "High-k, Metal gate, Photoemission spectroscopy, Poly-Si",
author = "H. Takahashi and J. Okabayashi and S. Toyoda and H. Kumigashira and M. Oshima and K. Ikeda and Liu, {G. L.} and Z. Liu and K. Usuda",
year = "2007",
month = mar,
day = "26",
doi = "10.1063/1.2436365",
language = "English",
isbn = "0735403732",
series = "AIP Conference Proceedings",
pages = "1569--1572",
booktitle = "SYNCHROTRON RADIATION INSTRUMENTATION",
note = "SYNCHROTRON RADIATION INSTRUMENTATION: 9th International Conference on Synchrotron Radiation Instrumentation ; Conference date: 28-05-2006 Through 28-06-2006",
}