Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, T. Ohtsuka, Y. Hata, M. Niwa

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high- k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high- k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.

Original languageEnglish
Article number042905
JournalApplied Physics Letters
Volume96
Issue number4
DOIs
Publication statusPublished - 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO<sub>2</sub>/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside'. Together they form a unique fingerprint.

Cite this