Annealing effect on the electrical properties of La2O 3/InGaAs MOS capacitors

T. Kanda, D. Zade, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, E. Y. Chang, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

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Engineering & Materials Science