Annealing effect on the electrical properties of La2O 3/InGaAs MOS capacitors

T. Kanda, D. Zade, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, E. Y. Chang, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The electrical characteristics of InGaAs MOS capacitors with 8-nm-thick La2O3 gate dielectrics have been measured. The effects of annealing temperature and annealing time on the interface state densities (Dit) have been extracted. It has been found that the low D it can be achieved by lowering the annealing temperature for an extended period of time.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages483-487
Number of pages5
Edition1
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: 2011 Mar 132011 Mar 14

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
CountryChina
CityShanghai
Period11/3/1311/3/14

ASJC Scopus subject areas

  • Engineering(all)

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    Kanda, T., Zade, D., Lin, Y. C., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Chang, E. Y., Natori, K., Hattori, T., & Iwai, H. (2011). Annealing effect on the electrical properties of La2O 3/InGaAs MOS capacitors. In China Semiconductor Technology International Conference 2011, CSTIC 2011 (1 ed., pp. 483-487). (ECS Transactions; Vol. 34, No. 1). https://doi.org/10.1149/1.3567624