Abstract
The transport and giant magnetoresistance (GMR) behavior on annealing was investigated in conjunction with the change in microstructure. Electrical resistivity and magnetoresistance were measured in a four-terminal geometry with in-plane current. Microstructures were determined using small angle X-ray scattering (SAXS) measurements and transmission electron microscopy (TEM).
Original language | English |
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Pages (from-to) | BR-01 |
Journal | Digests of the Intermag Conference |
Publication status | Published - 1999 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea Duration: 1999 May 18 → 1999 May 21 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering