Annealing effect on laser pulse-induced THz wave emission in Ta/CoFeB/MgO films

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Abstract

Laser-induced terahertz (THz) emission in Ta/CoFeB/MgO films with various thicknesses of CoFeB and for various annealing temperatures was studied. The THz emission intensity exhibited its maximum value for a CoFeB layer thickness of approximately 1.0 nm, and this maximum value was enhanced by 1.5 times by annealing at 300 °C. A correlation was found in the annealing dependence between saturation magnetization, conductivity, and THz emission intensity. The origin of the enhancement of THz emission intensity due to annealing was discussed in terms of the increase in the mean free path of majority spin hot electrons in the CoFeB layer with crystallization due to the annealing.

Original languageEnglish
Article number102401
JournalApplied Physics Letters
Volume111
Issue number10
DOIs
Publication statusPublished - 2017 Sep 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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