Annealing effect of tunnel-type GMR in Co-Al-O granular thin films

Jae Geun Ha; S. Mitani; Koki Takanashi; M. Ohnuma; K. Hono; H. Fujimori

doi:10.1016/S0304-8853(98)00598-8

Annealing effect of tunnel-type GMR in Co-Al-O granular thin films

Jae Geun Ha, S. Mitani, Koki Takanashi, M. Ohnuma, K. Hono, H. Fujimori

Materials Development Division

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

We have investigated the transport and GMR behavior for Co-Al-O granular thin films on annealing, in conjunction with the change in microstructure. The samples were annealed at 300°C for 10, 60 and 360 min to change the microstructure. The temperature dependence of electrical resistivity (ρ) shows the relationship of the log ρ ∝ T^-1/2 for all the annealed samples. The tunneling activation energy decreases with increasing annealing time. The magnitude of GMR decreases with increasing annealing time.

Original language	English
Pages (from-to)	21-23
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	198
DOIs	https://doi.org/10.1016/S0304-8853(98)00598-8
Publication status	Published - 1999 Jun 1
Event	Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can Duration: 1998 Jun 14 → 1998 Jun 19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/S0304-8853(98)00598-8

Fingerprint Dive into the research topics of 'Annealing effect of tunnel-type GMR in Co-Al-O granular thin films'. Together they form a unique fingerprint.

Cite this

@article{d4b7bbcd3f854404a53e04b6d42205de,

title = "Annealing effect of tunnel-type GMR in Co-Al-O granular thin films",

abstract = "We have investigated the transport and GMR behavior for Co-Al-O granular thin films on annealing, in conjunction with the change in microstructure. The samples were annealed at 300°C for 10, 60 and 360 min to change the microstructure. The temperature dependence of electrical resistivity (ρ) shows the relationship of the log ρ ∝ T-1/2 for all the annealed samples. The tunneling activation energy decreases with increasing annealing time. The magnitude of GMR decreases with increasing annealing time.",

author = "Ha, {Jae Geun} and S. Mitani and Koki Takanashi and M. Ohnuma and K. Hono and H. Fujimori",

year = "1999",

month = jun,

day = "1",

doi = "10.1016/S0304-8853(98)00598-8",

language = "English",

volume = "198",

pages = "21--23",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

note = "Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) ; Conference date: 14-06-1998 Through 19-06-1998",

}

TY - JOUR

T1 - Annealing effect of tunnel-type GMR in Co-Al-O granular thin films

AU - Ha, Jae Geun

AU - Mitani, S.

AU - Takanashi, Koki

AU - Ohnuma, M.

AU - Hono, K.

AU - Fujimori, H.

PY - 1999/6/1

Y1 - 1999/6/1

N2 - We have investigated the transport and GMR behavior for Co-Al-O granular thin films on annealing, in conjunction with the change in microstructure. The samples were annealed at 300°C for 10, 60 and 360 min to change the microstructure. The temperature dependence of electrical resistivity (ρ) shows the relationship of the log ρ ∝ T-1/2 for all the annealed samples. The tunneling activation energy decreases with increasing annealing time. The magnitude of GMR decreases with increasing annealing time.

AB - We have investigated the transport and GMR behavior for Co-Al-O granular thin films on annealing, in conjunction with the change in microstructure. The samples were annealed at 300°C for 10, 60 and 360 min to change the microstructure. The temperature dependence of electrical resistivity (ρ) shows the relationship of the log ρ ∝ T-1/2 for all the annealed samples. The tunneling activation energy decreases with increasing annealing time. The magnitude of GMR decreases with increasing annealing time.

UR - http://www.scopus.com/inward/record.url?scp=0032680513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032680513&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(98)00598-8

DO - 10.1016/S0304-8853(98)00598-8

M3 - Conference article

AN - SCOPUS:0032680513

VL - 198

SP - 21

EP - 23

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

T2 - Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98)

Y2 - 14 June 1998 through 19 June 1998

ER -