Annealing effect of tunnel-type GMR in Co-Al-O granular thin films

Jae Geun Ha, S. Mitani, K. Takanashi, M. Ohnuma, K. Hono, H. Fujimori

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


We have investigated the transport and GMR behavior for Co-Al-O granular thin films on annealing, in conjunction with the change in microstructure. The samples were annealed at 300°C for 10, 60 and 360 min to change the microstructure. The temperature dependence of electrical resistivity (ρ) shows the relationship of the log ρ ∝ T-1/2 for all the annealed samples. The tunneling activation energy decreases with increasing annealing time. The magnitude of GMR decreases with increasing annealing time.

Original languageEnglish
Pages (from-to)21-23
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: 1998 Jun 141998 Jun 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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