Abstract
We have investigated the transport and GMR behavior for Co-Al-O granular thin films on annealing, in conjunction with the change in microstructure. The samples were annealed at 300°C for 10, 60 and 360 min to change the microstructure. The temperature dependence of electrical resistivity (ρ) shows the relationship of the log ρ ∝ T-1/2 for all the annealed samples. The tunneling activation energy decreases with increasing annealing time. The magnitude of GMR decreases with increasing annealing time.
Original language | English |
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Pages (from-to) | 21-23 |
Number of pages | 3 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 198 |
DOIs | |
Publication status | Published - 1999 Jun 1 |
Event | Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can Duration: 1998 Jun 14 → 1998 Jun 19 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics