Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, Shigefusa F. Chichibu, Shoji Ishibashi, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Hideto Miyake

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Physics & Astronomy