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Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams
Akira Uedono, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi
Research output: Contribution to journal › Article › peer-review
21
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(Scopus)