Anisotropy of the spin-orbit branching ratio in angle-resolved photoemission from adsorbate layers

H. W. Yeom, T. Abukawa, Y. Takakuwa, S. Fujimori, T. Okane, Y. Ogura, T. Miura, S. Sato, A. Kakizaki, S. Kono

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27 Citations (Scopus)

Abstract

The angular variation of the spin-orbit branching ratio of In 4d photoemission doublets from ordered In overlayers on the Si(001) surface was investigated. The branching ratios show strong angular anisotropy in the investigated photon energy range of 70-100 eV, which depends both on the surface structure and the photon energy. It is demonstrated that the anisotropy in this energy range is caused by an inherent difference in the photoelectron waves of the 4d5/2 and 4d3/2 levels via photoelectron diffraction.

Original languageEnglish
Pages (from-to)L236-L241
JournalSurface Science
Volume395
Issue number2-3
DOIs
Publication statusPublished - 1998 Jan 12

Keywords

  • Adatom
  • Chemisorption
  • Indium
  • Low index single crystal surfaces
  • Photoelectron diffraction
  • Silicon
  • Soft X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Yeom, H. W., Abukawa, T., Takakuwa, Y., Fujimori, S., Okane, T., Ogura, Y., Miura, T., Sato, S., Kakizaki, A., & Kono, S. (1998). Anisotropy of the spin-orbit branching ratio in angle-resolved photoemission from adsorbate layers. Surface Science, 395(2-3), L236-L241. https://doi.org/10.1016/S0039-6028(97)00832-7