Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

Abstract

The angular dependence of the lateral growth rate as a function of crystal growth temperature (T g ) was determined for the liquid phase epitaxy (LPE) of (0 0 1) and (1 1 1)A,B InP. Low temperature LPE growth of InP was performed at constant growth temperatures between 330°C and 490°C. Post-growth variations in the shapes of pre-formed mesa structures show that lateral growth rates exhibit strong anisotropy in the [1 1 0] direction at low growth temperatures (T g < 400°C) on InP (0 0 1) surfaces. This implies that the kink-step density is highest in the [1 1 0] direction on InP (0 0 1). On InP (1 1 1)B surfaces, the maximum lateral growth rate occurred at T g = 450°C in the 〈1 1 2〉 direction, indicating that the kink-step density was highest in this direction. However, at T g = 450°C the lateral growth rate shows isotropic tendencies on (1 1 1)A surfaces, and the anisotropy decreases as the growth temperature increases.

Original languageEnglish
Pages (from-to)235-241
Number of pages7
JournalApplied Surface Science
Volume237
Issue number1-4
DOIs
Publication statusPublished - 2004 Oct 15

Keywords

  • Anisotropy
  • InP
  • Kink-step structure
  • LPE
  • Surface and interface phenomena

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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