Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

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1 Citation (Scopus)

Abstract

The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 °C. From the deformation of artificially made tables after epitaxy, it is shown that the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (T g < 400 °C). This indicated that kink density was high in [1 1 0] direction on InP(0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.

Original languageEnglish
Pages (from-to)78-82
Number of pages5
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
Publication statusPublished - 2003 Jun 30

Keywords

  • Anisotropy
  • Crystal morphology
  • InP
  • LPE
  • Surface and interface phenomena
  • Surface migration

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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