TY - JOUR
T1 - Anisotropic thermoelectric properties of MnS γ film prepared on R-sapphire
AU - Takeda, Komei
AU - Kikuchi, Yuta
AU - Hayashi, Kei
AU - Miyazaki, Yuzuru
AU - Kajitani, Tsuyoshi
PY - 2012/5/1
Y1 - 2012/5/1
N2 - We attempted to obtain an epitaxial MnSiγ (γ ∼ 1:7) film on R-sapphire, i.e., Sapphire(11̄02), substrate by pulsed laser deposition. We prepared MnSi γ films by changing the substrate temperature gradient. It was found that the MnSiγ film, whose temperature gradient in a substrate is parallel to Sapphire[112̄0], could be grown epitaxially on the substrate. The epitaxial relationship was MnSiγ(1000)[0010] || Sapphire(11̄02)[112̄0]. The thermoelectric properties of the epitaxial MnSi γ film were different in the a- and c-axes, reflecting the anisotropic MnSi γ crystal structure. The anisotropic thermoelectric properties are discussed in terms of the electronic structure.
AB - We attempted to obtain an epitaxial MnSiγ (γ ∼ 1:7) film on R-sapphire, i.e., Sapphire(11̄02), substrate by pulsed laser deposition. We prepared MnSi γ films by changing the substrate temperature gradient. It was found that the MnSiγ film, whose temperature gradient in a substrate is parallel to Sapphire[112̄0], could be grown epitaxially on the substrate. The epitaxial relationship was MnSiγ(1000)[0010] || Sapphire(11̄02)[112̄0]. The thermoelectric properties of the epitaxial MnSi γ film were different in the a- and c-axes, reflecting the anisotropic MnSi γ crystal structure. The anisotropic thermoelectric properties are discussed in terms of the electronic structure.
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U2 - 10.1143/APEX.5.055501
DO - 10.1143/APEX.5.055501
M3 - Article
AN - SCOPUS:84861376022
VL - 5
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 5
M1 - 055501
ER -