Anisotropic thermoelectric properties of MnS _γ film prepared on R-sapphire

We attempted to obtain an epitaxial MnSiγ (γ ∼ 1:7) film on R-sapphire, i.e., Sapphire(11̄02), substrate by pulsed laser deposition. We prepared MnSi _γ films by changing the substrate temperature gradient. It was found that the MnSiγ film, whose temperature gradient in a substrate is parallel to Sapphire[112̄0], could be grown epitaxially on the substrate. The epitaxial relationship was MnSiγ(1000)[0010] || Sapphire(11̄02)[112̄0]. The thermoelectric properties of the epitaxial MnSi _γ film were different in the a- and c-axes, reflecting the anisotropic MnSi _γ crystal structure. The anisotropic thermoelectric properties are discussed in terms of the electronic structure.