TY - JOUR
T1 - Anisotropic surface phonon dispersion of the hydrogen-terminated Si(110)-(1×1) surface
T2 - One-dimensional phonons propagating along the glide planes
AU - Matsushita, Stephane Yu
AU - Matsui, Kazuki
AU - Kato, Hiroki
AU - Yamada, Taro
AU - Suto, Shozo
PY - 2014/3/14
Y1 - 2014/3/14
N2 - We have measured the surface phonon dispersion curves on the hydrogen-terminated Si(110)-(1×1) surface with the two-dimensional space group of p2mg along the two highly symmetric and rectangular directions of ΓX̄ and ΓX′̄ using high-resolution electron-energy-loss spectroscopy. All the essential energy-loss peaks on H:Si(110) were assigned to the vibrational phonon modes by using the selection rules of inelastic electron scattering including the glide-plane symmetry. Actually, the surface phonon modes of even-symmetry to the glide plane (along ΓX̄) were observed in the first Brillouin zone, and those of odd-symmetry to the glide plane were in the second Brillouin zone. The detailed assignment was made by referring to theoretical phonon dispersion curves of Gräschus et al. [Phys. Rev. B 56, 6482 (1997)]. We found that the H-Si stretching and bending modes, which exhibit highly anisotropic dispersion, propagate along ΓX̄ direction as a one-dimensional phonon. Judging from the surface structure as well as our classical and quantum mechanical estimations, the H-Si stretching phonon propagates by a direct repulsive interaction between the nearest neighbor H atoms facing each other along ΓX̄, whereas the H-Si bending phonon propagates by indirect interaction through the substrate Si atomic linkage.
AB - We have measured the surface phonon dispersion curves on the hydrogen-terminated Si(110)-(1×1) surface with the two-dimensional space group of p2mg along the two highly symmetric and rectangular directions of ΓX̄ and ΓX′̄ using high-resolution electron-energy-loss spectroscopy. All the essential energy-loss peaks on H:Si(110) were assigned to the vibrational phonon modes by using the selection rules of inelastic electron scattering including the glide-plane symmetry. Actually, the surface phonon modes of even-symmetry to the glide plane (along ΓX̄) were observed in the first Brillouin zone, and those of odd-symmetry to the glide plane were in the second Brillouin zone. The detailed assignment was made by referring to theoretical phonon dispersion curves of Gräschus et al. [Phys. Rev. B 56, 6482 (1997)]. We found that the H-Si stretching and bending modes, which exhibit highly anisotropic dispersion, propagate along ΓX̄ direction as a one-dimensional phonon. Judging from the surface structure as well as our classical and quantum mechanical estimations, the H-Si stretching phonon propagates by a direct repulsive interaction between the nearest neighbor H atoms facing each other along ΓX̄, whereas the H-Si bending phonon propagates by indirect interaction through the substrate Si atomic linkage.
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U2 - 10.1063/1.4867997
DO - 10.1063/1.4867997
M3 - Article
AN - SCOPUS:84896383277
VL - 140
JO - Journal of Chemical Physics
JF - Journal of Chemical Physics
SN - 0021-9606
IS - 10
M1 - 104709
ER -