TY - JOUR
T1 - Anisotropic spin splitting in InGaAs wire structures
AU - Kunihashi, Yoji
AU - Kohda, Makoto
AU - Nitta, Junsaku
N1 - Funding Information:
The authors would like to thank S. Kettemann and M. Scheid for valuable discussions. This work was partly supported by Grants-in-Aid from JSPS, MEXT, SCOPE of the Ministry of Internal Affairs and Communications, Global COE Program “Materials Integration, Tohoku University”, and Mitsubishi Foundation. This work was partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.
PY - 2010/1/31
Y1 - 2010/1/31
N2 - We report anisotropic spin splitting in gate-fitted InGaAs wires along different crystal orientations. Anisotropic magnetoconductance minima reflecting spin splitting is observed by decreasing wire width at the same carrier density. Anisotropy of spin splitting is reduced by applying negative gate voltages, while the strength of spin splitting is enhanced in the present InGaAs wire structures. This gate voltage dependence of spin splitting shows qualitative agreements with the theoretical calculations taking both Rashba SOI and Dresselhaus SOI into account.
AB - We report anisotropic spin splitting in gate-fitted InGaAs wires along different crystal orientations. Anisotropic magnetoconductance minima reflecting spin splitting is observed by decreasing wire width at the same carrier density. Anisotropy of spin splitting is reduced by applying negative gate voltages, while the strength of spin splitting is enhanced in the present InGaAs wire structures. This gate voltage dependence of spin splitting shows qualitative agreements with the theoretical calculations taking both Rashba SOI and Dresselhaus SOI into account.
KW - Quantum wire
KW - Spin-orbit interaction
KW - Weak antilocalization
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U2 - 10.1016/j.phpro.2010.01.172
DO - 10.1016/j.phpro.2010.01.172
M3 - Conference article
AN - SCOPUS:76249104723
VL - 3
SP - 1255
EP - 1259
JO - Physics Procedia
JF - Physics Procedia
SN - 1875-3892
IS - 2
T2 - 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14
Y2 - 13 July 2009 through 17 July 2009
ER -