Anisotropic spin splitting in InGaAs wire structures

Yoji Kunihashi; Makoto Kohda; Junsaku Nitta

doi:10.1016/j.phpro.2010.01.172

Anisotropic spin splitting in InGaAs wire structures

Yoji Kunihashi, Makoto Kohda, Junsaku Nitta

ENG - Materials Science

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We report anisotropic spin splitting in gate-fitted InGaAs wires along different crystal orientations. Anisotropic magnetoconductance minima reflecting spin splitting is observed by decreasing wire width at the same carrier density. Anisotropy of spin splitting is reduced by applying negative gate voltages, while the strength of spin splitting is enhanced in the present InGaAs wire structures. This gate voltage dependence of spin splitting shows qualitative agreements with the theoretical calculations taking both Rashba SOI and Dresselhaus SOI into account.

Original language	English
Pages (from-to)	1255-1259
Number of pages	5
Journal	Physics Procedia
Volume	3
Issue number	2
DOIs	https://doi.org/10.1016/j.phpro.2010.01.172
Publication status	Published - 2010 Jan 31
Event	14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: 2009 Jul 13 → 2009 Jul 17

Keywords

Quantum wire
Spin-orbit interaction
Weak antilocalization

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1016/j.phpro.2010.01.172

Cite this

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title = "Anisotropic spin splitting in InGaAs wire structures",

abstract = "We report anisotropic spin splitting in gate-fitted InGaAs wires along different crystal orientations. Anisotropic magnetoconductance minima reflecting spin splitting is observed by decreasing wire width at the same carrier density. Anisotropy of spin splitting is reduced by applying negative gate voltages, while the strength of spin splitting is enhanced in the present InGaAs wire structures. This gate voltage dependence of spin splitting shows qualitative agreements with the theoretical calculations taking both Rashba SOI and Dresselhaus SOI into account.",

keywords = "Quantum wire, Spin-orbit interaction, Weak antilocalization",

author = "Yoji Kunihashi and Makoto Kohda and Junsaku Nitta",

note = "Funding Information: The authors would like to thank S. Kettemann and M. Scheid for valuable discussions. This work was partly supported by Grants-in-Aid from JSPS, MEXT, SCOPE of the Ministry of Internal Affairs and Communications, Global COE Program “Materials Integration, Tohoku University”, and Mitsubishi Foundation. This work was partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.; 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 ; Conference date: 13-07-2009 Through 17-07-2009",

year = "2010",

month = jan,

day = "31",

doi = "10.1016/j.phpro.2010.01.172",

language = "English",

volume = "3",

pages = "1255--1259",

journal = "Physics Procedia",

issn = "1875-3892",

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TY - JOUR

T1 - Anisotropic spin splitting in InGaAs wire structures

AU - Kunihashi, Yoji

AU - Kohda, Makoto

AU - Nitta, Junsaku

N1 - Funding Information: The authors would like to thank S. Kettemann and M. Scheid for valuable discussions. This work was partly supported by Grants-in-Aid from JSPS, MEXT, SCOPE of the Ministry of Internal Affairs and Communications, Global COE Program “Materials Integration, Tohoku University”, and Mitsubishi Foundation. This work was partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.

PY - 2010/1/31

Y1 - 2010/1/31

N2 - We report anisotropic spin splitting in gate-fitted InGaAs wires along different crystal orientations. Anisotropic magnetoconductance minima reflecting spin splitting is observed by decreasing wire width at the same carrier density. Anisotropy of spin splitting is reduced by applying negative gate voltages, while the strength of spin splitting is enhanced in the present InGaAs wire structures. This gate voltage dependence of spin splitting shows qualitative agreements with the theoretical calculations taking both Rashba SOI and Dresselhaus SOI into account.

AB - We report anisotropic spin splitting in gate-fitted InGaAs wires along different crystal orientations. Anisotropic magnetoconductance minima reflecting spin splitting is observed by decreasing wire width at the same carrier density. Anisotropy of spin splitting is reduced by applying negative gate voltages, while the strength of spin splitting is enhanced in the present InGaAs wire structures. This gate voltage dependence of spin splitting shows qualitative agreements with the theoretical calculations taking both Rashba SOI and Dresselhaus SOI into account.

KW - Quantum wire

KW - Spin-orbit interaction

KW - Weak antilocalization

UR - http://www.scopus.com/inward/record.url?scp=76249104723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76249104723&partnerID=8YFLogxK

U2 - 10.1016/j.phpro.2010.01.172

DO - 10.1016/j.phpro.2010.01.172

M3 - Conference article

AN - SCOPUS:76249104723

VL - 3

SP - 1255

EP - 1259

JO - Physics Procedia

JF - Physics Procedia

SN - 1875-3892

IS - 2

T2 - 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14

Y2 - 13 July 2009 through 17 July 2009

ER -

Anisotropic spin splitting in InGaAs wire structures

Abstract

Keywords

ASJC Scopus subject areas

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