Anisotropic spin splitting in InGaAs wire structures

Yoji Kunihashi, Makoto Kohda, Junsaku Nitta

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We report anisotropic spin splitting in gate-fitted InGaAs wires along different crystal orientations. Anisotropic magnetoconductance minima reflecting spin splitting is observed by decreasing wire width at the same carrier density. Anisotropy of spin splitting is reduced by applying negative gate voltages, while the strength of spin splitting is enhanced in the present InGaAs wire structures. This gate voltage dependence of spin splitting shows qualitative agreements with the theoretical calculations taking both Rashba SOI and Dresselhaus SOI into account.

Original languageEnglish
Pages (from-to)1255-1259
Number of pages5
JournalPhysics Procedia
Issue number2
Publication statusPublished - 2010 Jan 31
Event14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan
Duration: 2009 Jul 132009 Jul 17


  • Quantum wire
  • Spin-orbit interaction
  • Weak antilocalization

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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