Anisotropic magnetoresistance in Co 2(Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity

F. J. Yang, Y. Sakuraba, S. Kokado, Y. Kota, A. Sakuma, K. Takanashi

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)

Abstract

The anisotropic magnetoresistance (AMR) effect was systematically investigated in epitaxially grown Co 2Fe xMn 1-xSi films against Fe composition x and the annealing temperature. A change of sign in the AMR ratio from negative to positive was clearly detected when x increased from 0.6 to 0.8. This sign reversal can reasonably be explained by the change in the dominant s-d scattering process from s →d to s →d caused by the creation of large d-states at the Fermi level, suggesting the disappearance of half-metallicity at x = 0.8. The variations in the remanent density of states in the half-metallic gap against annealing temperature are also discussed from the viewpoint of the AMR ratio on the basis of the s-d scattering model.

Original languageEnglish
Article number020409
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number2
DOIs
Publication statusPublished - 2012 Jul 26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Anisotropic magnetoresistance in Co <sub>2</sub>(Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity'. Together they form a unique fingerprint.

Cite this