TY - JOUR
T1 - Anisotropic magnetoresistance in Co 2(Fe,Mn)Si Heusler epitaxial films
T2 - A fingerprint of half-metallicity
AU - Yang, F. J.
AU - Sakuraba, Y.
AU - Kokado, S.
AU - Kota, Y.
AU - Sakuma, A.
AU - Takanashi, K.
PY - 2012/7/26
Y1 - 2012/7/26
N2 - The anisotropic magnetoresistance (AMR) effect was systematically investigated in epitaxially grown Co 2Fe xMn 1-xSi films against Fe composition x and the annealing temperature. A change of sign in the AMR ratio from negative to positive was clearly detected when x increased from 0.6 to 0.8. This sign reversal can reasonably be explained by the change in the dominant s-d scattering process from s →d to s →d caused by the creation of large d-states at the Fermi level, suggesting the disappearance of half-metallicity at x = 0.8. The variations in the remanent density of states in the half-metallic gap against annealing temperature are also discussed from the viewpoint of the AMR ratio on the basis of the s-d scattering model.
AB - The anisotropic magnetoresistance (AMR) effect was systematically investigated in epitaxially grown Co 2Fe xMn 1-xSi films against Fe composition x and the annealing temperature. A change of sign in the AMR ratio from negative to positive was clearly detected when x increased from 0.6 to 0.8. This sign reversal can reasonably be explained by the change in the dominant s-d scattering process from s →d to s →d caused by the creation of large d-states at the Fermi level, suggesting the disappearance of half-metallicity at x = 0.8. The variations in the remanent density of states in the half-metallic gap against annealing temperature are also discussed from the viewpoint of the AMR ratio on the basis of the s-d scattering model.
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U2 - 10.1103/PhysRevB.86.020409
DO - 10.1103/PhysRevB.86.020409
M3 - Article
AN - SCOPUS:84864484030
VL - 86
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 2
M1 - 020409
ER -