Anisotropic Magnetoresistance Effect in Co2(Fe-Mn)(Al-Si) Heusler Alloy Thin Film

Hitomi Yako; Takahide Kubota; Koki Takanashi

doi:10.1109/TMAG.2015.2439284

Anisotropic Magnetoresistance Effect in Co₂(Fe-Mn)(Al-Si) Heusler Alloy Thin Film

Hitomi Yako, Takahide Kubota, Koki Takanashi

Materials Development Division

Research output: Contribution to journal › Article › peer-review

Abstract

The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co₂(Fe-Mn)Si, Co₂(Fe-Mn)(Al-Si) (CFMAS), and Co₂(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L2₁ ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.

Original language	English
Article number	7115152
Journal	IEEE Transactions on Magnetics
Volume	51
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2015.2439284
Publication status	Published - 2015 Nov 1

Keywords

Anisotropic magnetoresistance (AMR) effect
Half-metal
Heusler alloy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2015.2439284

Cite this

@article{1fb6cc57ee5b441a93fb19cf13b97c72,

title = "Anisotropic Magnetoresistance Effect in Co2(Fe-Mn)(Al-Si) Heusler Alloy Thin Film",

abstract = "The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co2(Fe-Mn)Si, Co2(Fe-Mn)(Al-Si) (CFMAS), and Co2(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L21 ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.",

keywords = "Anisotropic magnetoresistance (AMR) effect, Half-metal, Heusler alloy",

author = "Hitomi Yako and Takahide Kubota and Koki Takanashi",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2015",

month = nov,

day = "1",

doi = "10.1109/TMAG.2015.2439284",

language = "English",

volume = "51",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Anisotropic Magnetoresistance Effect in Co2(Fe-Mn)(Al-Si) Heusler Alloy Thin Film

AU - Yako, Hitomi

AU - Kubota, Takahide

AU - Takanashi, Koki

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co2(Fe-Mn)Si, Co2(Fe-Mn)(Al-Si) (CFMAS), and Co2(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L21 ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.

AB - The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co2(Fe-Mn)Si, Co2(Fe-Mn)(Al-Si) (CFMAS), and Co2(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L21 ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.

KW - Anisotropic magnetoresistance (AMR) effect

KW - Half-metal

KW - Heusler alloy

UR - http://www.scopus.com/inward/record.url?scp=84946118411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946118411&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2015.2439284

DO - 10.1109/TMAG.2015.2439284

M3 - Article

AN - SCOPUS:84946118411

VL - 51

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 11

M1 - 7115152

ER -