Anisotropic Magnetoresistance Effect in Co2(Fe-Mn)(Al-Si) Heusler Alloy Thin Film

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Abstract

The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co2(Fe-Mn)Si, Co2(Fe-Mn)(Al-Si) (CFMAS), and Co2(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L21 ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.

Original languageEnglish
Article number7115152
JournalIEEE Transactions on Magnetics
Volume51
Issue number11
DOIs
Publication statusPublished - 2015 Nov 1

Keywords

  • Anisotropic magnetoresistance (AMR) effect
  • Half-metal
  • Heusler alloy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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