Anisotropic magnetoresistance effect in Co2(Fe-Mn)(Al-Si) Heusler alloy thin films

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Half-metallic nature has been experimentally reported for some Cobalt (Co)-based full Heusler alloys, such as Co2MnSi [1], Co2(Fe-Mn)Si [2], Co2Fe(Al-Si) [3]. As has been reported in references [2, 3], it is effective to tune the material composition using a '4th element' for maximizing the spin polarization of the conduction electron. At the same time, such a 4th element sometimes increases the exchange stiffness at the interface, which also increases the magnetoresistance (MR) effect at room temperature [4]. In case of Co2(Fe-Mn)Si, a replacement of Mn to Fe causes increase of the exchange stiffness although the Fermi level approaches to the conduction band edge, which can decrease the spin polarization. To prevent the decrease of the spin polarization, we introduced a 5th element, Al, to the quarterly Heusler alloy Co (Fe-Mn)Si.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films

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