Anisotropic Kondo pseudogap in URu2Si2

J. Buhot, X. Montiel, Y. Gallais, M. Cazayous, A. Sacuto, G. Lapertot, D. Aoki, N. E. Hussey, C. Lacroix, C. Pépin, S. Burdin, M. A. Méasson

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A polarized electronic Raman scattering study reveals the emergence of symmetry dependence in the electronic Raman response of single-crystalline URu2Si2 below the Kondo crossover scale TK∼ 100 K. In particular, the development of a coherent Kondo pseudogap predominantly in the Eg channel highlights strong anisotropy in the Kondo physics in URu2Si2 that was previously neglected in theoretical models of this system and more generally has been sparsely treated for Kondo systems. A calculation of the Raman vertices demonstrates that the strongest Raman vertex does, indeed, develop within the Eg channel for interband transitions and reaches a maximum along the diagonals of the Brillouin zone, implying a d-wave-like geometry for the Kondo pseudogap. This generally overlooked property may have important consequences on the formation of the subsequent phases of this system, namely, the hidden order and the superconductivity.

Original languageEnglish
Article number245103
JournalPhysical Review B
Issue number24
Publication statusPublished - 2020 Jun 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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