Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures

D. K. Young, E. Johnston-Halperin, D. D. Awschalom, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically biased (Ga, Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In, Ga)As quantum well placed a distance d (20-420 nm) below the p-type ferromagnetic (Ga, Mn)As contact. In addition, a monotonic increase (from 0.5% to 7%) in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (∼0.5%) remains unchanged.

Original languageEnglish
Pages (from-to)1598-1600
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number9
DOIs
Publication statusPublished - 2002 Mar 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures'. Together they form a unique fingerprint.

Cite this